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Research Light Emitting devices The overall activity at Bath in photonic materials was strengthened even further in 1999 by the installation of a state of the art AIXTRON MOVPE reactor for the production of GaN, InGaN and AlGaN wide band gap semiconductor...more CART LED structures A novel GaN LED design based on a Two Well system with Charge Asymmetric ResonanceTunneling (CART). The system consists of two coupled wells: a Wide Well (WW) and active Quantum Well (QW). The wells are coupled via resonance tunneling barrier (RTB) transparent for electrons and blocking for holes ...more Unipolar light emitting device Thus far attention has focussed on the interband optical properties, and intersubband transitions have been largely ignored. However, the problem of obtaining good p-type conductivity in these materials currently blocks further development of high power lasers and light-emitting diodes...more Large Area Field Emission Displays Field emitters based on the wide band gap materials and applied to the substrates using printing techniques will be used to fabricate the field emission displays...more Collaboration within Bath University Optical spectroscopy of semiconductor structures and devices with Professor J J Davies and Dr D Wolverson. His group extensive experience of spin-flip Raman scattering and associated magneto-optical techniques in the study of II-VI epitaxial materials for green/blue devices and has recently extended these investigations to red-emitting GaAlInP and blue-violet-emitting GaInN alloys...more
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