 |
 |
|
 |
|
|
 |
|
Research Light Emitting devices The overall activity at Bath in photonic materials was strengthened even further in 1999 by the installation of a state of the art AIXTRON MOVPE reactor for the production of GaN, InGaN and AlGaN wide band gap semiconductor heterostructures for optoelectronic applications in the blue region of the spectrum, together with the optical, electrical and structural equipment needed to characterise the grown material. Recent developments in the field of the III-Nitride semiconductors have given rise to a new generation of light-emitting diodes and lasers for the visible spectral range, the main technological advantage of nitride semiconductors in comparison with other wide-band-gap semiconductors being their low degradation in optical devices, due to their high thermal and electrical stability. From the physics perspective the large mass difference between cations and anions, the large band gaps, the large piezoelectric effect and the large ionicity present some interesting differences to the more traditional commercial semiconductor materials such as GaAs.
|
|||||
|
||||||
|
|
||||||
