Planar Schottky Diodes

Schottky diodes are generally chosen for space-borne instrumentation, as their behaviour as non-linear heterodyne mixers and frequency multipliers is well understood and they can be operated without the need for cooling to low temperatures.

   Good performance at millimetre wavelengths has been achieved with planar, air-bridged Schottky diodes.  Performance is improved by reducing the parasitic capacitance of the structure by removing high permittivity GaAs from around the contact pads.   The schematic on the left shows a cross-sectional view through a typical, air-bridged diode structure.

The diode has a Pt/Au anode, formed on a GaAs substrate.  Anodes are formed through via holes lithographically defined in a thin layer of SiO2 covering the GaAs.   Gold contact pads are deposited on top of the SiO2 with a narrow finger making contact to the anode.  A trench is etched underneath the finger, removing GaAs to reduce the parasitic capacitance of the device.

 

A key step in the fabrication process is the formation of the via hole through which the anodes are formed.  The optical image on the left shows a resist window of 500nm diameter aligned to an ohmic contact pad.  The resist window was formed using electron-beam lithography.  The SEM image on the right shows the sample after reactive ion etching has transferred the 500nm diameter pattern to the silicon dioxide layer.

 

The SEM image on the left shows a complete, planar, air-bridged Schottky diode.   For remote sensing applications, an anti-parallel diode configuration is often preferred.  The optical image on the right shows an anti-parallel pair of diodes.

  
Individual diode-pair chips of size 100 x 60 microns are diced from the GaAs wafer for mounting in waveguide mixer mounts.  The diode chip is flip-chip soldered onto a metallised microstrip filter formed on a quartz substrate.  The filter drops into a channel cut across the waveguide in which the device sits.
    

SRD   21 Jan 05