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Characterisation of the Physical, Chemical and Electronic Properties of Solids on the Nanometre Scale |
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Recent Publications by the Positron Group |
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Positron Beams and their applications |
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A book edited by Paul Coleman aimed at graduate students and scientists interested in this field. Click above for further details |
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Encyclopedia of Applied Spectroscopy, ed. David L Andrews (Wiley-VCG, 2009) An encyclopaedia chapter on 'Positron Spectroscopy' by Paul Coleman. Introduction: Fundamentals: Experimental Methods: Examples of Research using Positron Spectroscopies: Glossary: Further Reading. |
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Positron Annihilation Spectroscopy of Defects in Semiconductors |
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“The
study of lattice damage using slow positrons following low-energy B+
implantation of silicon” RM Gwilliam,
AP Knights, A Nejim, B Sealy, CP Burrows, F Malik and PG Coleman Nucl.
Instrum. Methods B 175-7 62-67 (2001) “Growth
temperature dependence for the formation of vacancy clusters in Si/Si0.64/Ge0.36/Si
structures” AP Knights,
RM Gwilliam, BJ Sealy, TJ Grasby, CP Parry, DJF Fulgoni, PJ Phillips,
TE Whall, EHC Parker and PG Coleman J. Appl.
Phys. 89, 76-79 (2001) “The
influence of substrate temperature on the evolution of
ion implantation induced defects in epitaxial 6H-SiC” W
Anwand, G Brauer, P
G Coleman, H Wirth and W Skorupa Appl. Surf.
Sci. 194, 127-130 (2002) “Simple expression for vacancy
concentrations at half ion range following MeV ion implantation of
silicon” P G Coleman,
C P Burrows, and A P Knights Appl. Phys.
Lett., 80, 947-9 (2002) “At-temperature annealing of
near-surface vacancy-type defects observed by positronium formation
spectroscopy” P G Coleman,
F Malik and A P Knights J. Phys.:
Condens. Matter, 14, 681-8 (2002) “Room-temperature
evolution of vacancy-type damage created by 2 keV B+
implantation of Si” R.M. Gwilliam, A.P. Knights,
C.P. Burrows and P.G. Coleman*
J.
Vac. Sci. Technol. B20, 427-430 (2001) “Defects in GaN films studied by positron
annihilation spectroscopy” XD
Pi, PG Coleman, CL Tseng, CP Burrows, B Yavich and WN Wang J
Phys.:Condens. Mat. 14, L243-L248 (2002) “Photoluminescence
studies of type IIa and nitrogen-doped CVD diamond” A
Wotherspoon, JW Steeds, PG Coleman, D Wolverson, JJ
Davies, S Lawson and J Diamond and
Diamond-Related Materials 11, 692-6 (2002) “Fluorine
in silicon: Diffusion, trapping, and precipitation” XD Pi, CP
Burrows, PG Coleman Phys. Rev.
Lett. 90, 155901 (2003 ) “Positron
annihilation spectroscopy as a diagnostic tool for process monitoring
of buried oxide layer formation in Si” PG Coleman,
AP Knights and MJ Anc J. Appl.
Phys. 93, 698-701 (2003) “Oxygen-related
vacancy-type defects in ion-implanted silicon studied by positron
annihilation spectroscopy” XD Pi, PG
Coleman, RM Gwilliam and BJ Sealy J. Phys.:
Condens.Matter 15 S2825 – 33 (2003) “Study
of defects in ion-implanted silicon using photoluminescence and
positron annihilation” R Harding, G
Davies, PG Coleman, CP Burrows, J Wong-Leung Physica B 340-2, 738-742 (2003) “Positron
annihilation spectroscopy of the interface between nanocrystalline Si
and SiO2” XD Pi, PG
Coleman, R Harding, GDavies, RM Gwilliam and BJ Sealy Physica
B 340, 1094-1098 (2003) “Characterization of the interface region during
the agglomeration of silicon nanocrystals in silicon dioxide” X. D. Pi and P. G. Coleman, R. Harding, G.
Davies and R.M. Gwilliam J. Appl.
Phys., 95, 8155-59 (2004) “The
Impact of Growth Conditions on Vacancy-Type Defects in
Silicon-Germanium Structures Grown by Molecular Beam Epitaxy” Kareem M.
Shoukri, Yaser M. Haddara, A. P. Knights and P. G. Coleman Appl. Phys.
Lett. 86, 131923 (2005) “Direct
high-resolution determination of vacancy-type defect profiles in
ion-implanted silicon” “Optical Attenuation in
Defect-Engineered Silicon Rib Waveguides” P.J. Foster, J. K. Doylend, P. Mascher, and A.P. Knights and P. G. Coleman J. Appl.
Phys. 99, 073101 (2005) “Identification by
photoluminescence and positron annihilation of vacancy and interstitial
intrinsic defects in ion-implanted silicon” G
Davies, R Harding , Jin Tan , PG Coleman , CP Burrows , J Wong-Leung J.
Appl. Phys. 100, 073501 (2006) “Fluorine-vacancy
complexes in ultra-shallow B-implanted Si” Dana Abdulmalik , PG Coleman,
NEB Cowern , AJ Smith , BJ Sealy , W Lerch , S Paul , F Cristiano Appl. Phys. Lett. 89,
052114 (2006) “The origin of the red
luminescence in Mg-doped GaN” D Wolverson, Shanshan Zeng ,
Gazi Aliev , J. Davies , S Bingham , D Abdulmalik , PG Coleman , Tao
Wang , P Parbrook Appl. Phys.
Lett. 89, 022107 (2006) “Self-implantation of Cz-Si: Clustering
and annealing of defects” DA
Abdulmalik, PG Coleman, IY Al-Qaradawi Appl. Surf.
Sci 252
3209-3214 (2006) “Characterization
of a SiC/SiC composite by X-ray diffraction, atomic force microscopy
and positron spectroscopies” G Brauer, W
Anwand, F Eichhorn, W Skorupa, C Hofer, C Teichert, J Kuriplach, J
Cizek, I Prochazka, PG Coleman, T Nozawa, A Kohyama Appl. Surf.
Sci 252
3342-3351 (2006) “Photoluminescence
response of ion-implanted silicon” Ruth
E Harding , Gordon Davies, Appl.
Phys. Lett. 89 181917 (2006)
"Fluorine-vacancy complexes in Si-SiGe-Si
structures" "Monovacancy and Interstitial Migration in
Ion-Implanted Silicon" "Activation energies for the formation and
evaporation of vacancy clusters in silicon" "Observation of vacancy defects at silicon
grain boundaries formed via suppressed solid phase epitaxy" "Modification of Silicon Waveguide
Structures using Ion Implantation Induced Defects" "Enhancement of phosphorus activation in
vacancy engineered thin silicon-on-insulator substrates" "Probing the formation of Silicon
nano-crystals (Si-ncs) using Variable Energy Positron Annihilation
Spectroscopy" "Evolution of
vacancy-type defects in silicon-on-insulator structures" J. Appl.
Phys. 110, 016104 (2011) "Activation Energies for Vacancy Migration,
Clustering and Annealing in Silicon" P.G. Coleman, C.J.
Edwardson, A.P.Knights
and R.M. Gwilliam New J. Phys. 14 025007 (2012).
“Positron annihilation studies of
fluorine-vacancy complexes in Si and SiGe” C.J. Edwardson, P.G. Coleman, H. El-Mubarek and A. Gandy J. Appl. Phys. 111, 073510
(2012). “Direct
observation of electron capture and re-emission by the divacancy
via charge transient positron
spectroscopy” C.J.
Edwardson, P.G. Coleman, D. J. Paez, J. K.
Doylend and A.P. Knights Phys.
Rev. Lett. 110, 136401 (2013) |
Positron Beam Techniques |
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“Development of a novel tool for
semiconductor process control” R M Gwilliam,
AP Knights, Mat. Sci. “Optimization of measurement parameters
in Doppler broadening spectroscopy” Pi Xiaodong,
C P Burrows and P G Coleman Appl. Surf.
Sci. 194 255-259 (2002) “A technique for positron spectroscopy of monovacancies formed
by low-temperature ion implantation of silicon” RE Mason, PG
Coleman Appl. Surf.
Sci 252
3228-3230 (2006) “Real-time
full spectrum fitting of beam-based Doppler broadening data” PG Coleman,
CP Burrows, RE Mason Appl. Surf.
Sci 252 3183-3187 (2006)
"Ice and Atoms: experiments with
laboratory-based positron beams" |
Positron Re-Emission Spectroscopy (1996-2002) |
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"Energy
Spectroscopy of Positrons Re-emitted from Ag(100)" "Silicon Carbide: A New
Positron Moderator" "The Effect of
Thermalisation Length and Work Function on Epithermal Positron Emission
from Solids" "Measurement
of the Energy Spectrum of Secondary Electrons Ejected from Solids by
Positron Impact" “Positron Re-emission from
Electrodeposited NiW” RI Grynszpan
and PG Coleman Meas. Sci.
Technol. 12 163-166 (2001) “Re-emission of slow positrons from
tungsten at elevated temperatures” I.Y.
Al-Qaradawi and P G Coleman Appl. Surf.
Sci. 194, 20-23 (2002) “Tests of a diamond field-assisted
moderator” I.Y.
Al-Qaradawi, P A Sellin and P G Coleman Appl. Surf.
Sci. 194, 29-31 (2002) |
Positron Microscopy (1997-99) |
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"The UEA Positron Re-emission Microscope: First Images" Coleman P G, Goodyear
A and Burrows C P 1997 "Positron
re-emission microscopy of perfect and O+-implanted SiC" "Lateral Near Surface Vacancy Migration In O+
Implanted Sic Studied By Positron Reemission Microscopy" |
Positron Beam Studies of Thin Films and Surface Layers |
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“Organo-metallic interfaces studied by
positron annihilation spectroscopy” C Tucker, FA
Smith and PG Coleman J.Phys.:Condens.
Matter 13 1857-67 (2001) “The
migration of defects and nitrogen atoms in nitrided surface layers of
austenitic stainless steel followed by microscopic methods” Y Jirásková, G Brauer, O
Schneeweiss, C Blawert , W Anwand, and P G Coleman Appl. Surf.
Sci. 194 145-149 (2002) “Fatigue
Properties of Mn-doped Lead Zirconate Titanate Thin Film
Capacitors” Q Zhang, DJ
Keeble, PG Coleman and R E Mason Int. Ferroelectrics 62, 119-125
(2004) “Variable energy positron
beam analysis of vacancy defects in laser ablated SrTiO3
thin films on SrTiO3” DJ Keeble, Stephen McGuire , RE Mason , PG
Coleman , Y Koutsonas , T J. Appl. Phys. 100,
044109-1-6 (2006) “Corrosion properties of
duplex Ti-6Al-4V alloy in chloride media using electrochemical and
positron annhilation spectroscopy techniques”
M.M. Khaled, B.S. Yilbas,
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Positron-Atom Scattering |
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"Energy dependence of the positronium
formation cross section in argon" “Positronium
formation in molecular oxygen” J. Archer, S.M. Trilov
and P.G. Coleman J.Phys.:Conf.Ser. in press (2013) “Positronium formation in methanol and
ethanol” P.G. Coleman, N.J.
Culver and B.M.W. M. Dowler Phys.
Rev. A 87, 012712
(2013) |
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