"Profile Broadening of High Dose Germanium Implants into (100) Silicon at Elevated Temperatures due to Channelling"
A Nejim, AP Knights, C Jeynes, PG Coleman and CJ Patel
J. Appl. Phys. 83, 3565-73 (1998)

"A Study of the Evolution of Carrier and Vacancy Depth Profiles with Annealing Temperature of Si-implanted GaAs"
AP Knights, R Apiwatwaja, R Gwilliam, BJ Sealy and PG Coleman
Semicon. Sci. Technol., 13, 1266-1271 (1998)

"Open-volume defect tails in Ge-implanted Si probed by Slow Positrons"
AP Knights, A Nejim, P G Coleman, H Kheyrandish and S Romani
Appl. Phys. Lett., 73 1373-5 (1998)

"The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy"
A P Knights, F Malik and P G Coleman
Appl. Phys. Lett. 75, 466-8 (1999)

"Positron Spectroscopy of vacancy-type defects in Si created by 5keV B⁺ implantation"
F Malik, PG Coleman, AP Knights, R Gwilliam, A Nejim and O Y Ho
J.Phys.:Condens. Matter, 10, 10403-10408 (1998)

"Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si"
P G Coleman and A P Knights
Appl. Surf. Sci., accepted for publication (1999)

"Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy"
A P Knights, A Nejim and P G Coleman
Nucl. Instrum. Methods B: accepted for publication (1999)

"Applying slow positrons to the study of ion implantation induced defects in GaAs"
Knights AP, Malik F, Coleman PG, et al.
Mat Sci Eng B 66, 146 (1999)

"Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe"
Coleman PG, Knights AP, Gwilliam RM
J Appl. Phys. 86, 5988 (1999)

"Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation"
Knights AP, Lourenco MA, Homewood KP, et al.
J Appl Phys 87, 3973 (2000)

"Development of a novel tool for semiconductor process control"
Gwilliam RM, Knights AP, Wendler E, Sealy BJ, Burrows CP and Coleman PG
Mat. Sci. Technol., to be published (EXMATEC 2000 Proceedings)

"The study of lattice damage using slow positrons following low-energy B⁺ implantation of silicon"
RM Gwilliam, AP Knights, A Nejim, B Sealy, CP Burrows, F Malik and PG Coleman
Nucl. Instrum. Methods B 175-7 62-67 (2001)

"Development of a novel tool for semiconductor process control"
R M Gwilliam, AP Knights, E Wendler, BJ Sealy, CP Burrows and PG Coleman
Mat. Sci. Eng. B, 80 60-64 (2001)

"Growth temperature dependence for the formation of vacancy clusters in Si/Si_0.64/Ge_0.36/Si structures"
AP Knights, RM Gwilliam, BJ Sealy, TJ Grasby, CP Parry, DJF Fulgoni, PJ Phillips, TE Whall, EHC Parker and PG Coleman
J. Appl. Phys. 89, 76-79 (2001)

"Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon"
P G Coleman, C P Burrows, and A P Knights
Appl. Phys. Lett., 80, 947-9 (2002)

"At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopy"
P G Coleman, F Malik and A P Knights
J. Phys.: Condens. Matter, 14, 681-8 (2002)

"Room-temperature evolution of vacancy-type damage created by 2 keV B⁺ implantation of Si"
R.M. Gwilliam, A.P. Knights, C.P. Burrows and P.G. Coleman^*
J. Vac. Sci. Technol. B20, 427-430 (2002)

"Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si"
PG Coleman, AP Knights and MJ Anc
J. Appl. Phys. 93, 698-701 (2003)

"Oxygen-related vacancy-type defects in ion-implanted silicon studied by positron annihilation spectroscopy"
XD Pi, PG Coleman, RM Gwilliam and BJ Sealy
J. Phys.: Condens.Matter 15 S2825 – 33 (2003)

"Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO₂"
XD Pi, PG Coleman, R Harding, G Davies, RM Gwilliam and BJ Sealy
Physica B 340, 1094-1098 (2003)

"Characterization of the nc-Si/SiO₂ interface region during the agglomeration of nc-Si"
XD Pi, PG Coleman, RM Gwilliam, BJ Sealy, R Harding and G Davies
J. Appl. Phys., 95, 8155-59 (2004)

"Current trends in ion implantation"
RM Gwilliam
Materials Science Forum 363-5 20-24 (2001)

"Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon"
AP Knights and PG Coleman
Defect and Diffusion Forum 183-5 41-52 (2000)

"A new tool for nondestructive monitoring of ion implantation"
PG Coleman, CP Burrows, AP Knights, RM Gwilliam, BJ Sealy, RD Goldberg, Aayati, M Foad and A Murrell
Ion Implantation Technology-2000, eds. H. Ryssel, L. Frey, J. Gyulai and H Glawischnig (IEEE:2000) pp 654-657

"Effect of Residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor"
S Ortolland, NG Wright, CM Johnson, AP Knights, PG Coleman, CP Burrows and AJ Pidduck
Mat. Sci. Forum 353-5, 567-70 (2000)

"Slow Positron Beams – a versatile tool for studying ion implantation defect related phenomena"
B J Sealy, A P Knights, R M Gwilliam, C P Burrows and P G Coleman
Applications of Accelerators in Research and Industry – 16^th Int’l Conference, ed. J L Duggan and I L Morgan (AIP 2001) pp 745-748

"Construction and Performance of a Bench-top Mapping Positron Alpha Tool"
P.G. Coleman, C.P. Burrows, A.P. Knights, B.J. Sealy and R.M. Gwilliam
Ion Implantation Technology-2002 (IEEE:2003)

"Nanocrystalline Si studied by beam-based positron annihilation spectroscopy"
P. G. Coleman, X. D. Pi, R. M. Gwilliam and B. J. Sealy
Mat. Sci. Forum 445-6, 66-68 (2004)

"Sensitivity of Positron Annihilation Spectroscopy to Energy Contamination in Low Energy Boron Ion Implantation"
A P Knights and P G Coleman
Mat. Sci. Forum 445-6, 123-5 (2004)