Coherent Raman

 

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University of Bath

Dept. of Physics

 

 

 

Coherent Raman detected electron paramagnetic resonance

The vast majority of optically detected magnetic resonance experiments reported to date measure a change in some optical property, such as circular dichroism or photoluminescence, when a magnetic transition is power saturated by resonant microwave, or radio frequency, radiation. Coherent Raman detected magnetic resonance experiments differ fundamentally from this approach: instead of measuring changes in the populations of the magnetic states, coherent Raman detected experiments measure the microwave induced coherence between the magnetic states. Like a conventional, microwave detected, electron paramagnetic resonance (EPR) experiment, coherent Raman detected EPR measures the precession of the sample magnetisation. These differences in the basic physics lead to a number of important advantages in the application of the phenomenon as an analytical spectroscopic technique as we discuss below.

There are, in principle, as many different types of coherent Raman detected EPR as there are conventional incoherent experiments. Each technique differs in the optical property that is measured and the "coupling" mechanism between the magnetic and the optical transitions. The experiments proposed here are the coherent analogue of the well established method of magnetic circular dichroism (MCD) detected EPR. Indeed, provided that the optical line width is larger than the microwave frequency, it is possible to describe the experiments we propose as the microwave frequency modulation of the circular dichroism by the precessing magnetisation. The theory of the experiment is therefore a combination of the very well established theories of magneto-optics and EPR.

The optical detection of electron paramagnetic resonance

EPR is a very well established and extensively used technique for the investigation of condensed matter. It has the merit of being non-destructive and provides sufficiently high spectral resolution for crystal field effects and hyperfine interactions to be studied in detail. The experiments thus provide information on the nature, location and charge states of paramagnetic ions incorporated into organic and inorganic hosts, on defect and dopant centres in crystalline materials and on the interactions between magnetic centres. EPR is also one the most import probes of the electronic structure of transition metal ion centres in proteins.

A major limitation of conventional EPR spectroscopy, that is especially important in the study of modern semiconductor devices, is the poor sensitivity when compared to many optical spectroscopies. Commercial EPR spectrometers have sensitivities of order 1011 spins at low temperatures for a g @ 2 species with a linewidth of 10-4 Tesla (i.e. 1011 spins per gauss). For epitaxial semiconductors, the active layers are typically of thickness 10-6 m and of area 10-5 m2 or less. Thus, magnetic centres in such specimens can only be observed if the concentrations are of order of
1022 m-3, and then only if the linewidths are narrow. Frequently, the concentrations of interest are less than this and the specimen volumes smaller: as a result, conventional EPR has not been used extensively for the study of semiconductor heterostructures. In contrast, MCD detected EPR has been successfully used to study a wide range of paramagnetic species in semiconductors. 

Coherent Raman detected EPR as coherent spin-flip Raman spectroscopy

Spin-flip Raman spectroscopy is described separately. Stokes and anti-Stokes radiation separated from the laser excitation frequency by the energy of the magnetic splitting is generated in this experiment. It is also possible to regard the coherent Raman detected EPR experiment as an extension of spin-flip Raman in which the magnetic transition is excited with microwave radiation to form a three wave mixing coherent Raman experiment. Coherent Raman radiation is generated with frequencies equal to the sum and difference of the laser and microwave frequencies. Such a modification has three important effects. Firstly, the Raman radiation is often many orders of magnitude more intense than the spontaneous experiment. Secondly, the magnetic resolution of the experiment is limited by the microwave rather than the laser line width. Thirdly, the Raman radiation is forward scattered; co-propagating with the transmitted optical excitation. This allows the Raman radiation to be measured with high efficiency. The coherent Stokes and anti-Stokes waves of the Raman model are equivalent to modulation sidebands when the experiment is viewed as a modulation of the light beam by the precessing magnetisation.

In the single previous report of coherent Raman detected EPR in the literature, on donor spins in n-type CdS, the coherent radiation was up to three orders of magnitude larger than the spontaneous spin-flip radiation. Further, up to 6 % of the incident laser radiation was converted to Raman light in a 1 mm thick crystal containing a donor concentration of 2 x 1023 m-3. This could be detected with a Fabry-Perot interferometer based instrument. The optical heterodyne instrument can detect coherent Raman radiation @ 1016 times weaker than a few mW of incident laser excitation. Noting that the coherent Raman power is proportional to the square of the number of chromophores, we find that the minimum detectable donor concentration in a @ 1 mm epitaxial layer of CdS would be @ 1019 m-3. In comparison, conventional EPR would require a concentration of @ 4 x 1023 m-3 in a layer with an area of 10-5 m2. Further, the optical experiment will have little difficulty in studying layers with much smaller areas. Focusing to areas of @ 10-11 m2 is possible with visible radiation. In principle an absolute sensitivity of @ 102 spins would be obtained, although in practice laser heating and optical pumping effects may become limiting. Nevertheless, the combination of extremely high absolute sensitivity and spatial resolution will be a very powerful tool in studying the distribution of paramagnetic centres in technological devices.