Modulational instability in a silicon-on-insulator directional coupler: role of the coupling-induced group velocity dispersion (bibtex)
@article{Ding2012_OL_MI,
abstract = {We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires decreases, the increasing dispersion of the coupling makes the GVD in the symmetric supermode more normal and suppresses the bandwidth of the MI gain observed for larger separations.},
author = {Ding, W. and Staines, O. K. and Hobbs, G. D. and Gorbach, A. V. and de Nobriga, C. and Wadsworth, W. J. and Knight, J. C. and Skryabin, D. V. and Strain, M. J. and Sorel, M. and {De La Rue}, R. M.},
doi = {10.1364/OL.37.000668},
issn = {0146-9592},
journal = {Optics Letters},
month = feb,
number = {4},
pages = {668},
publisher = {OSA},
shorttitle = {Opt. Lett.},
title = {{Modulational instability in a silicon-on-insulator directional coupler: role of the coupling-induced group velocity dispersion}},
url = {http://ol.osa.org/abstract.cfm?URI=ol-37-4-668},
volume = {37},
year = {2012}
}
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